期刊
CRYSTAL GROWTH & DESIGN
卷 9, 期 1, 页码 525-527出版社
AMER CHEMICAL SOC
DOI: 10.1021/cg8008305
关键词
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资金
- University of Georgia Research Foundation
- U.S. Office of Naval Research [N004315578]
- Oak Ridge National Laboratory (ORNL)
Gallium phosphide (GaP) nanowires were synthesized in a high yield by vapor-phase reaction of gallium vapor and phosphorus vapor at 1150 degrees C in a tube furnace system. The nanowires have diameters in the range of 25-100 nm and lengths of Lip to tens of micrometers. Twinning growth occurs in GaP nanowires, and as a result most nanowires contain a high density of twinning faults. Novel necklacelike GaP nanostructures that were formed by stringing tens of amorphous Ga-P-O microbeads upon one crystalline GaP nanowires were also found in some synthesis runs. This simple vapor-phase approach may be applied to synthesize other important group III-V compound nanowires.
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