期刊
CRYSTAL GROWTH & DESIGN
卷 9, 期 2, 页码 1216-1218出版社
AMER CHEMICAL SOC
DOI: 10.1021/cg801186w
关键词
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资金
- Spanish MEC [TEC-2005-05781-C03-01/-03, NAN2004-09109-C04-01/-03, Consolider-QOIT CSD-2006-0019]
- CAM [S-505/ESP/000200]
- JA [TEP383]
- European Commission [NMP4-CT-2004-500101]
- I3P
In this work we report on the ability to form low density Ga(As)Sb quantum ring-shaped nanostructures (Q-rings) on GaAs(001) substrates by the droplet epitaxy technique. The Q-rings are formed by crystallization of Ga droplets under antimony flux. After being capped by a GaAs layer, these nanostructures show surface mounding features that are correlated with the buried nanostructures, as demonstrated by TEM analysis, permitting an easy surface location of the optically active Q-rings.
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