期刊
CRYOGENICS
卷 60, 期 -, 页码 76-79出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.cryogenics.2014.01.012
关键词
HEMT; Low power consumption; Ultra low temperatures; Unsaturated regime
A new approach to deep-cooled amplifier design with microwatt level consumed/dissipated power is presented. The relevant technique is based on exploiting the unsaturated regime of the high electron mobility transistor. The power consumption of several microwatts for 20 dB gain amplifier was obtained at 300 mK ambient temperature. This is at least an order of magnitude better than the figures known up to date for high-frequency (0.1-1 GHz) amplifiers. (C) 2014 Elsevier Ltd. All rights reserved.
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