期刊
CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES
卷 38, 期 1, 页码 57-90出版社
TAYLOR & FRANCIS INC
DOI: 10.1080/10408436.2012.736887
关键词
ZnS nanostructures; photoluminescence; photocatalysis; sensors; light-emitting diodes; field effect transistor
资金
- National Natural Science Foundation [51002059, 21001046, 91123008]
- 973 Program of China [2011CBA00703, 2011CB933300]
- Program for New Century Excellent Talents of the University in China [NCET-11-0179]
- Research Fund for the Doctoral Program of Higher Education [20100142120053]
- Natural Science Foundation of Hubei Province [2011CDB035]
- Director Fund of WNLO
Zinc sulfide (ZnS) nanostructures have attracted increasing attention due to their potential application in both conditional optical devices and new generation of nano-electronics and nano-optoelectronics because of their special structure-related chemical and physical properties. In this article, beginning with the synthesis of ZnS nanostructures with various original morphologies, we summarize the state-of-art research progresses on ZnS nanostructures. This is followed by the recent progresses on the improvement of their properties, especially the novel potential applications. We highlight the recent achievements on photoluminescence, photocatalysis, light-emitting diodes (LEDs), field-effect transistors (FET), sensors, dye-sensitized solar cells, and field emission (FE) based on ZnS nanostructures. Finally, we present an outlook on the future development of ZnS nanostructures.
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