期刊
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
卷 15, 期 2, 页码 1764-1766出版社
AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/jnn.2015.9330
关键词
Polymer Bound PAG Resist; Photoacid Generator; ArF Lithography; Negative Type Photoresist
类别
资金
- Technology Innovation Program - Ministry of Knowledge and Economy (MKE, Korea) [10036982]
- Priority Research Centers Program through National Research Foundation (NRF) of Korea [2012029029]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10036982] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Photoacid generators (PAGs) have been widely used as a key component for improving photoresist performance. The acid diffusion influences on the photoresist characteristics of resolution and line edge roughness (LER). The PAG bound polymer resist has been a key component for solving the problems of PAG aggregation and acid diffusion control. A triphenyl sulfonium salt methacrylate as PAG was synthesized and copolymerized with crosslinkable glycidyl methacrylate and methyl methacrylate by radical reaction for a new PAG bound polymer resist. The characterization of resist polymers was carried out by H-1 NMR. The lithographic performance of photoresists was investigated by ArF lithography. Both PAG bound resist and the PAG blended resist were employed to demonstrate the effect of PAG unit in a resist system. The polymer bound PAG resist improved the LEA and showed a higher resolution than the PAG blend resist.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据