期刊
ACS NANO
卷 9, 期 2, 页码 2009-2017出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn507048d
关键词
vanadium dioxide; phase transition; phase coexistence; scanning microwave microscopy; insulator-to-metal transition; impedance mapping
类别
资金
- INTEL customized SRC (Semiconductor Research Corporation) project at Penn State University
- NSF MRSEC through the Center for Nanoscale Science at Penn State University [DMR-08-20404]
Quantitative impedance mapping of the spatially inhomogeneous insulator-to-metal transition (IMT) in vanadium dioxide (VO2) is performed with a lateral resolution of 50 nm through near-field scanning microwave microscopy (SMM) at 16 GHz. SMM is used to measure spatially resolved electronic properties of the phase coexistence in an unstrained VO2 film during the electrically as well as thermally induced IMT. A quantitative impedance map of both the electrically driven filamentary conduction and the thermally induced bulk transition is established. This was modeled as a 2-D heterogeneous resistive network where the distribution function of the IMT temperature across the sample is captured. Applying the resistive network model for the electrically induced IMT case, we reproduce the filamentary nature of electronically induced IMT, which elucidates a cascading avalanche effect triggered by the local electric field across nanoscale insulating and metallic domains.
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