期刊
COMPTES RENDUS PHYSIQUE
卷 14, 期 9-10, 页码 816-839出版社
ELSEVIER FRANCE-EDITIONS SCIENTIFIQUES MEDICALES ELSEVIER
DOI: 10.1016/j.crhy.2013.04.003
关键词
Chem insulators; Flat bands; Fractional quantum Hall effect; Topological order
资金
- Simons Foundation
- NSF [DMR-1006608, PHY-1005429]
- EPSRC [EP/D050952/1]
- UCLA Startup Funds
- EPSRC [EP/D050952/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/D050952/1] Funding Source: researchfish
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1311781] Funding Source: National Science Foundation
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1006608] Funding Source: National Science Foundation
- Division Of Physics
- Direct For Mathematical & Physical Scien [1005429] Funding Source: National Science Foundation
We present a pedagogical review of the physics of fractional Chern insulators with a particular focus on the connection to the fractional quantum Hall effect. While the latter conventionally arises in semiconductor heterostructures at low temperatures and in high magnetic fields, interacting Chern insulators at fractional band filling may host phases with the same topological properties, but stabilized at the lattice scale, potentially leading to high-temperature topological order. We discuss the construction of topological flat band models, provide a survey of numerical results, and establish the connection between the Chern band and the continuum Landau problem. We then briefly summarize various aspects of Chern band physics that have no natural continuum analogs, before turning to a discussion of possible experimental realizations. We close with a survey of future directions and open problems, as well as a discussion of extensions of these ideas to higher dimensions and to other topological phases. (C) 2013 Academie des sciences. Published by Elsevier Masson SAS. All rights reserved.
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