A novel low-firing BiZn2VO6 microwave dielectric ceramic with low loss

novel low-firing microwave dielectric ceramic BiZn2VO6 was prepared using the solid state reaction method. The phase composition, sintering behavior, and microwave dielectric properties were investigated. BiZn2VO6 ceramic could be well densified at relatively low temperature 780 A degrees C and exhibited promising microwave dielectric properties with a epsilon (r) = 15.0, Q x f = 20,640 GHz, and tau (f) = -88 ppm/A degrees C. BiZn2VO6 ceramic has chemically compatibility with Ag electrodes when sintered at 780 A degrees C for 4 h.