期刊
JOURNAL OF LUMINESCENCE
卷 158, 期 -, 页码 6-10出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jlumin.2014.09.007
关键词
ZnO; NiO; MOCVD; UV-LED
类别
资金
- National Natural Science Foundation of China [11404097, 11304112, 61205086]
- National Key Basic Research and Development Program of China [2011CB302005]
Ultraviolet light-emitting diodes (LED) based on n-ZnO/NiO/p-GaN were realized by metal-organic chemical vapor deposition (MOCVD). The devices exhibited diode-like rectifying current-voltage characteristics and had a turn-on voltage of 7.5 V. High quality NiO film as an electron blocking layer inserted between the ZnO and GaN films showed high resistance state with preferred [1 1 1] orientation, which produced a larger ZnO/NiO conduction band offset of 2.93 eV than that of ZnO/GaN (0.15 eV). The electroluminescence spectra of the n-ZnO/i-NiO/p-GaN heterostructure demonstrated that electrons were effectively confined in the ZnO active region, and thus leading to the enhancement of the excitonic emission from the ZnO side. (C) 2014 Elsevier B.V. All rights reserved.
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