4.8 Article

Synthesis, Structure, and Air-stable N-type Field-Effect Transistor Behaviors of Functionalized Octaazanonacene-8,19-dione

期刊

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
卷 54, 期 21, 页码 6292-6296

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/anie.201500972

关键词

conjugation; density functional calculations; electron transport; heterocycles; X-ray diffraction

资金

  1. MOE [RG 16/12, RG RG133/14, ARC 20/12, ARC 2/13]
  2. NRF
  3. New Initiative Fund from NTU, Singapore
  4. Singapore National Research Foundation [NRF-CRP5-2009-04]
  5. Grants-in-Aid for Scientific Research [15H00876, 26105001, 26288038, 25288092] Funding Source: KAKEN

向作者/读者索取更多资源

Increasing the length of N-heteroacenes or their analogues is highly desirable because such materials could have great potential applications in organic electronics. In this report, the large -conjugated N-heteroquinone 6,10,17,21-tetra-((triisopropylsilyl)ethynyl)-5,7,9,11,16,18,20,22-octaazanonacene-8,19-dione (OANQ) has been synthesized and characterized. The as-prepared OANQ shows high stability under ambient conditions and has a particularly low LUMO level, which leads to it being a promising candidate for air-stable n-type field-effect transistors (FETs). In fact, FET devices based on OANQ single crystals have been fabricated and an electron mobility of up to 0.2cm(2)V(-1)s(-1) under ambient conditions is reported. More importantly, no obvious degradation was observed even after one month. Theoretical calculations based on the single crystal are consistent with the measured mobility.

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