期刊
CIRP ANNALS-MANUFACTURING TECHNOLOGY
卷 60, 期 1, 页码 571-574出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.cirp.2011.03.072
关键词
Polishing; Single crystal; Surface integrity
资金
- MEXT, Japan [20360068]
- Die and Mold Technology Promotion Foundation
- Mazak Foundation
- Osawa scientific studies grants foundation
- Grants-in-Aid for Scientific Research [20360068] Funding Source: KAKEN
A novel polishing technique combined with the irradiation of atmospheric pressure plasma was proposed for the finishing of a silicon carbide material. The irradiation of helium-based water vapor plasma efficiently oxidized the surface of single-crystal 4H-SiC (0 0 0 1), and a nanoindentation test revealed that the hardness of SiC decreased by one order of magnitude compared with that of the unprocessed surface. Plasma-assisted polishing using a CeO2 abrasive enabled us to improve the surface roughness of a commercially available SiC wafer without introducing crystallographical subsurface damage, and a scratch-free atomically flat surface with an rms roughness of 0.1 nm level was obtained. (C) 2011 CIRP.
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