期刊
CIRP ANNALS-MANUFACTURING TECHNOLOGY
卷 58, 期 1, 页码 485-490出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.cirp.2009.03.115
关键词
Polishing; Mechanism; Chemical mechanical polishing (CMP); Electronic material
资金
- Ministry of Science & Technology and the Korea Science & Engineering Foundation [R15-2006-022-01003-0]
Chemical mechanical polishing (CMP) technology is faced with the challenge of processing new electronic materials. This paper focuses on the balance between chemical and mechanical reactions in the CMP process that is required to cope with a variety of electronic materials. The material properties were classified into the following categories: easy to abrade (ETA), difficult to abrade (DTA), easy to react (ETR) and difficult to react (DTR). The chemical and mechanical balance for the representative ETA-ETR, DTA-ETR, ETA-DTR and DTA-DTR materials was considered for defect-free surfaces. This paper suggests the suitable polishing methods and examples for each electronic material. (c) 2009 CIRP.
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