期刊
CIRP ANNALS-MANUFACTURING TECHNOLOGY
卷 57, 期 1, 页码 567-570出版社
ELSEVIER
DOI: 10.1016/j.cirp.2008.03.132
关键词
etching; single crystal; wafer
The thickness uniformity of an quartz crystal wafer is an essential requirement for improving the productivity of a quartz resonator because it prevents frequency adjustment after dicing the wafer. In this paper, chemical finishing utilizing a localized atmospheric pressure plasma is proposed to correct the thickness deviation of a quartz crystal wafer. In this process, free figuring without mask patterning can be realized by the numerically controlled scanning of a localized removal area. The thickness uniformity of a commercially available quartz wafer is improved from 250 to 50 nm only by one correction without subsurface damage. (C) 2008 CIRP.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据