期刊
CHINESE SCIENCE BULLETIN
卷 57, 期 11, 页码 1235-1240出版社
SCIENCE PRESS
DOI: 10.1007/s11434-011-4930-0
关键词
non-volatile memory; resistive random access memory (RRAM); doping technology
资金
- National Basic Research Program of China [2010CB934200, 2008CB925002]
- National Natural Science Foundation of China [60825403, 50972160]
- National High-Tech Research & Development Program of China [2008AA031403, 2009AA03Z306]
In this paper, improvements of resistive random access memory (RRAM) using doping technology are summarized and analyzed. Based on a Cu/ZrO2/Pt device, three doping technologies with Ti ions, Cu, and Cu nanocrystal, respectively, are adopted in the experiments. Compared to an undoped device, improvements focus on four points: eliminating the electroforming process, reducing operation voltage, improving electrical uniformity, and increasing device yield. In addition, thermal stability of the high resistance state and better retention are also achieved by the doping technology. We demonstrate that doping technology is an effective way of improving the electrical performance of RRAM.
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