期刊
CHINESE SCIENCE BULLETIN
卷 57, 期 23, 页码 2995-2999出版社
SCIENCE PRESS
DOI: 10.1007/s11434-012-5335-4
关键词
graphene; controlled growth; chemical vapor deposition; copper substrate
资金
- National Natural Science Foundation of China [51102241]
- State Key Laboratory of Robotics [RLO201012]
Recently, chemical vapor deposition (CVD) on copper has been becoming a main method for preparing large-area and high- quality monolayer graphene. In this paper, we first briefly introduce the preliminary understanding of the microstructure and growth behavior of graphene on copper, and then focus on the recent progress on the quality improvement, number of layers control and transfer-free growth of graphene. In the end, we attempt to analyze the possible development of CVD growth of graphene in future, including the controlled growth of large-size single-crystal graphene and bilayer graphene with different stacking orders.
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