期刊
CHINESE PHYSICS LETTERS
卷 35, 期 9, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0256-307X/35/9/097401
关键词
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资金
- National Natural Science Foundation of China [11704403]
- National Key Research Program of China [2016YFA0401000, 2016YFA0300604]
- Strategic Priority Research Program (B) of Chinese Academy of Sciences [XDB07020100]
Devices of electric double-layer transistors (EDLTs) with ionic liquid have been employed as an effective way to dope carriers over a wide range. However, the induced electronic states can hardly survive in the materials after releasing the gate voltage V-G at temperatures higher than the melting point of the selected ionic liquid. Here we show that a permanent superconductivity with transition temperature T-c of 24 and 15K is realized in single crystals and polycrystalline samples of HfNCl and ZrNCl upon applying proper V-G 's at different temperatures. Reversible change between insulating and superconducting states can be obtained by applying positive and negative V-G at low temperature such as 220K, whereas V-G's applied at 250 K induce the irreversible superconducting transition. The upper critical field H-c2 of the superconducting states obtained at different gating temperatures shows similar temperature dependence. We propose a reasonable scenario that partial vacancy of Cl ions could be caused by applying proper V-G 's at slightly higher processing temperatures, which consequently results in a permanent electron doping in the system. Such a technique shows great potential to systematically tune the bulk electronic state in the similar two-dimensional systems.
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