相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Oxygen vacancy-induced ferromagnetism in un-doped ZnO thin films
Peng Zhan et al.
JOURNAL OF APPLIED PHYSICS (2012)
Optical property modification of ZnO: Effect of 1.2 MeV Ar irradiation
Soubhik Chattopadhyay et al.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2 (2011)
Defect-Related Emissions and Magnetization Properties of ZnO Nanorods
Bharati Panigrahy et al.
ADVANCED FUNCTIONAL MATERIALS (2010)
Blue Luminescence of ZnO Nanoparticles Based on Non-Equilibrium Processes: Defect Origins and Emission Controls
Haibo Zeng et al.
ADVANCED FUNCTIONAL MATERIALS (2010)
Influence of nitrogen on the defects and magnetism of ZnO:N thin films
Ke Yue Wu et al.
JOURNAL OF APPLIED PHYSICS (2010)
Suppression of compensation from nitrogen and carbon related defects for p-type N-doped ZnO
Kun Tang et al.
APPLIED PHYSICS LETTERS (2009)
Local chemical states and thermal stabilities of nitrogen dopants in ZnO film studied by temperature-dependent x-ray photoelectron spectroscopy
X. H. Li et al.
APPLIED PHYSICS LETTERS (2009)
Identification of Acceptor States in Li–N Dual-Doped p-Type ZnO Thin Films
Zhang Yin-Zhu et al.
CHINESE PHYSICS LETTERS (2009)
Ultraviolet electroluminescence from n-ZnO:Ga/p-ZnO:N homojunction device on sapphire substrate with p-type ZnO:N layer formed by annealing in N2O plasma ambient
J. C. Sun et al.
CHEMICAL PHYSICS LETTERS (2008)
Effect of Post-Annealing on Microstructural and Electrical Properties of N+ Ion-Implanted into ZnO:In Films
Kong Chun-Yang et al.
CHINESE PHYSICS LETTERS (2008)
XPS study of nitrogen-implanted ZnO thin films obtained by DC-Magnetron reactive plasma
N. Tabet et al.
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA (2008)
Characterization of ZnO:N films prepared by annealing sputtered zinc oxynitride films at different temperatures
J. P. Zhang et al.
JOURNAL OF APPLIED PHYSICS (2007)
Theoretical study of CeO2 doped with tetravalent ions
D. A. Andersson et al.
PHYSICAL REVIEW B (2007)
p-type conduction in unintentional carbon-doped ZnO thin films
S. T. Tan et al.
APPLIED PHYSICS LETTERS (2007)
Visual-infrared electroluminescence emission from ZnO/GaAs heterojunctions grown by metal-organic chemical vapor deposition
Guotong Du et al.
APPLIED PHYSICS LETTERS (2007)
Blue luminescent centers and microstructural evaluation by XPS and Raman in ZnO thin films annealed in vacuum, N2 and O2
X. Q. Wei et al.
PHYSICA B-CONDENSED MATTER (2007)
Hole transport in p-type ZnO films grown by plasma-assisted molecular beam epitaxy
J. W. Sun et al.
APPLIED PHYSICS LETTERS (2006)
Investigation on the p-type formation mechanism of arsenic doped p-type ZnO thin film
Hong Seong Kang et al.
APPLIED PHYSICS LETTERS (2006)
Effects of nitrogen doping and illumination on lattice constants and conductivity behavior of zinc oxide grown by magnetron sputtering
B. Yao et al.
JOURNAL OF APPLIED PHYSICS (2006)
Low-resistivity, stable p-type ZnO thin films realized using a Li-N dual-acceptor doping method
J. G. Lu et al.
APPLIED PHYSICS LETTERS (2006)
Enhancement of near-band edge photoluminescence of ZnO thin films by employing MgF2 buffer layer
RJ Hong et al.
JOURNAL OF CRYSTAL GROWTH (2006)
Electrical characterization of p-type N-doped ZnO films prepared by thermal oxidation of sputtered Zn3N2 films
Y Nakano et al.
APPLIED PHYSICS LETTERS (2006)
P-doped p-type ZnO films deposited on Si substrate by radio-frequency magnetron sputtering
P Wang et al.
APPLIED PHYSICS LETTERS (2006)
Comparison of valence band x-ray photoelectron spectrum between Al-N-codoped and N-doped ZnO films
GW Cong et al.
APPLIED PHYSICS LETTERS (2006)
ZnO p-n junction light-emitting diodes fabricated on sapphire substrates -: art. no. 031911
SJ Jiao et al.
APPLIED PHYSICS LETTERS (2006)
A comprehensive review of ZnO materials and devices -: art. no. 041301
U Ozgür et al.
JOURNAL OF APPLIED PHYSICS (2005)
Rapid preparation, characterization, and photoluminescence of ZnO films by a novel chemical method
XD Gao et al.
MATERIALS RESEARCH BULLETIN (2005)
Optical detection of electron paramagnetic resonance for intrinsic defects produced in ZnO by 2.5-MeV electron irradiation in situ at 4.2 K -: art. no. 035203
LS Vlasenko et al.
PHYSICAL REVIEW B (2005)
Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO
A Tsukazaki et al.
NATURE MATERIALS (2005)
Tunable visible photoluminescence from ZnO thin films through Mg-doping and annealing
S Fujihara et al.
CHEMISTRY OF MATERIALS (2004)
Fabrication and characterization of p-type ZnO films by pyrolysis of zinc-acetate-ammonia solution
ZG Ji et al.
JOURNAL OF CRYSTAL GROWTH (2003)
p-type ZnO thin films prepared by oxidation of Zn3N2 thin films deposited by DC magnetron sputtering
C Wang et al.
JOURNAL OF CRYSTAL GROWTH (2003)
High-quality ZnO thin films prepared by two-step thermal oxidation of the metallic Zn
SJ Chen et al.
JOURNAL OF CRYSTAL GROWTH (2002)
Intrinsic n-type versus p-type doping asymmetry and the defect physics of ZnO -: art. no. 075205
SB Zhang et al.
PHYSICAL REVIEW B (2001)