4.5 Article

Band Structures of Metal-Oxide Capped Graphene: A First Principles Study

期刊

CHINESE PHYSICS LETTERS
卷 27, 期 7, 页码 -

出版社

IOP PUBLISHING LTD
DOI: 10.1088/0256-307X/27/7/077201

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资金

  1. National Natural Science Foundation of China [60776017]
  2. State Key Projects [2009ZX02039-003, 2009ZX02022-002, 2009ZX02035-005]
  3. ASIC and System [09MS004]

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We perform a first-principles calculation based on density functional theory to investigate the interface between single layer graphene and metal oxides. Our study reveals that the monolayer graphene becomes semiconducting by single crystal SiO2 and Al2O3 contact, with energy gaps to similar to 0.9 and similar to 1.8 eV, respectively. We find the gap originates from the breakage of.. bond integrity, whose extent is related to the interface atom configuration. We believe that our results highlight a promising direction for the feasibility to apply large scale graphene layers as building blocks in future electronics devices.

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