期刊
ACS NANO
卷 9, 期 7, 页码 7515-7522出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.5b02616
关键词
graphene/pentacene barristor; ion-gel gate dielectric; flexible and ambipolar transistor; high mobility and on/off ratio; negative differential resistance
类别
资金
- National Research Foundation of Korea (NRF) - Korea government (MSIP) [2013R1A3A2042120, 2015001948, 2011-0030229]
- National Creative Research Laboratory program of Korea [2012026372]
- National Research Foundation of Korea [2013R1A3A2042120] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
High-quality channel layer is required for next-generation flexible electronic devices. Graphene is a good candidate due to its high carrier mobility and unique ambipolar transport characteristics but typically shows a low on/off ratio caused by gapless band structure. Popularly investigated organic semiconductors, such as pentacene, suffer from poor carrier mobility. Here, we propose a graphene/pentacene channel layer with high-k ion-gel gate dielectric. The graphene/pentacene device shows both high on/off ratio and carrier mobility as well as excellent mechanical flexibility. Most importantly, it reveals ambipolar behaviors and related negative differential resistance, which are controlled by external bias. Therefore, our graphene/pentacene barristor with ion-gel gate dielectric can offer various flexible device applications with high performances.
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