期刊
CHINESE JOURNAL OF CHEMICAL PHYSICS
卷 25, 期 3, 页码 325-329出版社
CHINESE PHYSICAL SOC
DOI: 10.1088/1674-0068/25/03/325-329
关键词
Graphene; Doping; Conductivity; X-ray photoelectron spectroscopy; Raman spectrum
资金
- Ministry of Science and Technology of China [2011CB921403]
- National Natural Science Foundation of China [21121003, 90921013, 11074231, 11004179]
- Chinese Academy of Sciences
Chemical doping is an effective method to intrinsically modify the chemical and electronic property of graphene. We propose a novel approach to synthesize the nitrogen-doped graphene via thermal annealing graphene with urea, in which the nitrogen source can be controllably released from the urea by varying the annealed temperature and time. The doped N content and the configuration N as well as the thermal stabilities are also evaluated with X-ray photoelectron spectroscopy and Raman spectra. Electrical measurements indicate that the conductivity of doped graphene can be well regulated with the N content. The method is expected to produce large scale and controllable N-doped graphene sheets for a variety of potential applications.
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