期刊
CHINESE JOURNAL OF CHEMICAL PHYSICS
卷 23, 期 5, 页码 582-586出版社
CHINESE PHYSICAL SOC
DOI: 10.1088/1674-0068/23/05/582-586
关键词
Thin film; Successive ionic layer adsorption; Chalcopyrite compound
Thin films of CuInS2 were grown on glass substrate by successive ionic layer adsorption and reaction method with different [Cu]/[In] ratios and annealed at 400 degrees C for 30 min. The crystal structure and grain sizes of the thin films were characterized by X-ray diffraction method. Atomic force microscopy was used to determine surface morphology of the films. Optical and electrical properties of these films were investigated as a function of [Cu]/[In] ratios. The electrical resistivity of CuInS2 of thin films was determined using a direct current-two probe method in the temperature range of 300-470 K. It is observed that, the electrical resistivity values show a big decreasing with increasing [Cu]/[In] ratio. Hence, the [Cu]/[In] ratio in the solution can drastically affect the structural, electrical, and optical properties of thin films of CuInS2.
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