期刊
CHEMISTRY-A EUROPEAN JOURNAL
卷 20, 期 7, 页码 1931-1939出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/chem.201303259
关键词
aggregation; luminescence; organic light-emitting diodes; siloles; steric hindrance
资金
- National Natural Science Foundation of China [51273053, 21104012]
- National Basic Research Program of China (973 Program) [2013CB834702]
- Fundamental Research Funds for the Central Universities [2013ZZ0002]
- Program for Changjiang Scholars and Innovative Research Teams in Chinese Universities [IRT 1231]
- Guangdong Innovative Research Team Program of China [20110C0105067115]
- Research Grants Council of Hong Kong [HKUST2/CRF/10]
2,3,4,5-Tetraarylsiloles are a class of important luminogenic materials with efficient solid-state emission and excellent electron-transport capacity. However, those exhibiting outstanding electroluminescence properties are still rare. In this work, bulky 9,9-dimethylfluorenyl, 9,9-diphenylfluorenyl, and 9,9'-spirobifluorenyl substituents were introduced into the 2,5-positions of silole rings. The resulting 2,5-difluorenyl-substituted siloles are thermally stable and have low-lying LUMO energy levels. Crystallographic analysis revealed that intramolecular pi-pi interactions are prone to form between 9,9'-spirobifluorene units and phenyl rings at the 3,4-positions of the silole ring. In the solution state, these new siloles show weak blue and green emission bands, arising from the fluorenyl groups and silole rings with a certain ex-tension of pi conjugation, respectively. With increasing substituent volume, intramolecular rotation is decreased, and thus the emissions of the present siloles gradually improved and they showed higher fluorescence quantum yields (Phi(F) = 2.5-5.4 %) than 2,3,4,5-tetraphenylsiloles. They are highly emissive in solid films, with dominant green to yellow emissions and good solid-state Phi(F) values (75-88%). Efficient organic light-emitting diodes were fabricated by adopting them as host emitters and gave high luminance, current efficiency, and power efficiency of up to 44 100 cdm(-2), 18.3 cdA(-1), and 15.7 lmW(-1), respectively. Notably, a maximum external quantum efficiency of 5.5% was achieved in an optimized device.
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