期刊
CHEMISTRY-A EUROPEAN JOURNAL
卷 19, 期 20, 页码 6265-6273出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/chem.201203940
关键词
density functional calculations; electronic structure; graphene; rewritable-memory effect; synthetic methods
资金
- National Natural Science Foundation of China [21074034]
- Fundamental Research Funds for the Central Universities
- State Key Laboratory of ASIC & System of Fudan University [11KF007]
A new polyaniline (PANI)-functionalized graphene oxide (GO-PANI) was prepared by using an in situ oxidative graft polymerization of aniline on the surface of GO. Its highest occupied molecular orbital (HOMO), lowest unoccupied molecular orbital (LUMO), ionization potential (IP), and electron affinity (EA) values experimentally estimated by the onset of the redox potentials were 5.33, 3.57, 5.59, and 3.83eV, respectively. A bistable electrical-switching effect was observed in electronic device with the GO-PANI film sandwiched between the indium tin oxide (ITO) and Al electrodes. This device exhibited two accessible conductivity states, that is, the low-conductivity (OFF) state and the high-conductivity (ON) state, and can be switched to the ON state under a negative electrical sweep, and can also be reset to the initial OFF state by a reverse (positive) electrical sweep. The ON state is nonvolatile and can withstand a constant voltage stress of 1V for 3h and 108 read cycles at 1V under ambient conditions. The nonvolatile nature of the ON state and the ability to write, read, and erase the electrical states, fulfill the functionality of a rewritable memory. An ON/OFF current ratio of more than 104 at 1V achieved in this memory device is high enough to promise a low misreading rate through the precise control of the ON and OFF states. The mechanism associated with the memory effects was elucidated from molecular simulation results.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据