4.6 Article

Polymorph-Tuned Synthesis of alpha- and beta-Bi2O3 Nanowires and Determination of Their Growth Direction from Polarized Raman Single Nanowire Microscopy

期刊

CHEMISTRY-A EUROPEAN JOURNAL
卷 17, 期 4, 页码 1304-1309

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/chem.201001684

关键词

bismuth oxide; nanowires; photoluminescence; polarized Raman microscopy; polymorphism

资金

  1. NRL [20090083138]
  2. Nano RD program [20090083221]
  3. Center for Nanostructured Materials Technology from MEST, Korea [2009K000468]

向作者/读者索取更多资源

We report polymorph-tuned synthesis of alpha- and beta-Bi2O3 nanowires and their single nanowire micro-Raman study. The single crystalline Bi2O3 nanowires in different phases (alpha and beta) were selectively synthesized by adjusting the heating temperature of Bi precursor in a vapor transport process. No catalyst was employed. Furthermore, at an identical precursor evaporation temperature, alpha- and beta- phase Bi2O3 nanowires were simultaneously synthesized along the temperature gradient at a substrate. The growth direction of alpha-Bi2O3 nanowires was revealed by polarized Raman single nanowire spectra. For thin beta-Bi2O3 nanowires with a very small diameter, the polarized Raman single nanowire spectrum was strongly influenced by the shape effect.

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