4.8 Article

Stacking of Two-Dimensional Materials in Lateral and Vertical Directions

期刊

CHEMISTRY OF MATERIALS
卷 26, 期 17, 页码 4891-4903

出版社

AMER CHEMICAL SOC
DOI: 10.1021/cm502170q

关键词

-

资金

  1. NRF [20140610011]
  2. Center for Advanced Soft Electronics under the Global Frontier Research Program through the National Research Foundation [2011-0031630]
  3. Ministry of Science
  4. ICT
  5. Future Planning, Korea
  6. Ministry of Science, ICT & Future Planning, Republic of Korea [IBS-R019-D1-2014-A00] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
  7. National Research Foundation of Korea [2013H1A2A1033483] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

Along With the explosive interest in graphene research, much attention has been paid to other two-dimensional (2D) materials such as transition Metal dithalcogenides (TMDs) and hexagonal boron nitride (h-BN). In particular the stacking of various 2D materials in the vertical and lateral directions has been studied recently, as novel physicochemical properties are expected that could result in new applications for electronic devices In this Perspective, recent advances in the stacking of 2D materials are discussed from the point of view of materials chemistry. In particular, methods for stacking of 2D materials (h-BN/graphene, graphene/WS2 (or MoS2)/graphene, etc.), the properties of vertically and laterally stacked 2D materials, and possible applications are discussed. Finally, we discuss important emerging issues to be studied in future.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据