Room-Temperature Atomic Layer Deposition of Platinum

Plasma-assisted atomic layer deposition (ALD) processes were developed for the deposition of platinum films at room temperature. High-quality, virtually pure films with a resistivity of 18-24 mu Omega cm were obtained for processes consisting of MeCpPtMe3 dosing, O-2 plasma exposure, and H-2 gas or H-2 plasma exposure. The H-2 pulses were used to reduce the PtOx that is otherwise deposited at low substrate temperatures. It is shown that the processes enable the deposition of Pt on polymer, textile, and paper substrates, which is a significant result as it demonstrates the broad application range of Pt ALD, including applications involving temperature-sensitive materials.