期刊
CHEMISTRY OF MATERIALS
卷 25, 期 21, 页码 4165-4172出版社
AMER CHEMICAL SOC
DOI: 10.1021/cm401635v
关键词
atomic layer deposition (ALD); scanning electrochemical microscopy (SECM); nanoporous films; finite element modeling
资金
- Fulbright
- United States India Educational Foundation (USIEF)
- Bhabha Atomic Research Centre, Government of India
- Robert A. Welch Foundation [F-0021]
- NSF [CHE-1111518]
- Division Of Chemistry
- Direct For Mathematical & Physical Scien [1111518] Funding Source: National Science Foundation
The scanning electrochemical microscope (SECM) was used to characterize the atomic layer deposition (ALD) of TiO2 on indium-doped tin oxide (ITO) substrates by studying electron transfer through pores in the thin films (1-5 nm thickness). The extent of electron transfer, and thus the porosity of the films, was evaluated by transient electrochemistry. These studies show that ALD deposition of TiO2 on ITO does not produce pinhole-free films but rather porous deposits with electrochemical behavior similar to that of microelectrode arrays up to about 30 ALD cycles. All the experimental results are explained in the context of a numerical model developed by finite element analysis and corroborated by complementary conductive atomic force microscopy (cAFM) results that directly reveal localized, nanoscale current conduction paths in thinner TiO2 layers with a transition to more spatially uniform conduction in the thickest layers. SECM images demonstrate the existence of pinholes even on films that have been subjected to more than 100 ALD cycles (thicknesses larger than 4 nm).
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据