4.8 Article

High-Performance n-Type Organic Transistor with a Solution-Processed and Exfoliation-Transferred Two-Dimensional Crystalline Layered Film

期刊

CHEMISTRY OF MATERIALS
卷 24, 期 16, 页码 3263-3268

出版社

AMER CHEMICAL SOC
DOI: 10.1021/cm301775c

关键词

single crystalline organic field-effect transistor; n-type semiconductor; two-dimensional single crystal; solution process; mechanical cleavage

资金

  1. Basic Science Research Program (CRI) through National Research Foundation of Korea [RIAMI-AM0209(0417-20090011)]
  2. WCU (World Class University) project through National Research Foundation of Korea [R31-2008-000-10075-0]
  3. Ministry of Education, Science and Technology

向作者/读者索取更多资源

High-performance n-type organic field-effect transistors (OFETs) based on 2-dimensional (2D) crystalline layered films of the novel dicyanodistyrylbenzene (DCS) derivative (2Z,2'Z)-3,3'-(1,4-phenylene)bis(2-(3,5-bis(trifluoromethyl)phenyl)acrylonitrile) (CN-TFPA) were fabricated using a simple solution process. The OFETs showed electron mobilities of up to 0.55 cm(2) V-1 s(-1), which was attributed to the appropriate electron affinity and dense molecular packing in the well-ordered 2D terrace structure. Because of the easy exfoliation capabilities of the CN-TFPA 2D crystalline layers, 2-10 CN-TFPA molecular monolayers could be successfully transferred onto the substrates, enabling the fabrication of ultrathin OFET devices with an active layer thickness of similar to 30 nm.

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