期刊
CHEMISTRY OF MATERIALS
卷 22, 期 5, 页码 1782-1787出版社
AMER CHEMICAL SOC
DOI: 10.1021/cm903287u
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资金
- National Science Foundation [0447555]
- U.S. Department of Energy, the Office of Basic Energy Sciences [DE-FG02-06ER46294]
- Electron Microscopy Center [080512-01A]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0447555] Funding Source: National Science Foundation
For the first time, Patterned growth of boron nitride nanotubes is achieved by catalytic chemical vapor deposition (CCVD) at 1200 degrees C using MgO, Ni, or Fe as the catalysts, and an Al2O3 diffusion barrier as underlayer. The as-grown BNNTs are clean, vertically aligned, and have high crystallinity. Near band-edge absorption similar to 6 0 eV is detected, without significant sub-band absorption centers. Electronic transport measurement confirms that these BNNTs are perfect insulators,applicable for future deep-UV photoelectronic devices and high-power electronics.
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