4.8 Article

Critical Role of Screw Dislocation in the Growth of Co(OH)2 Nanowires as Intermediates for Co3O4 Nanowire Growth

期刊

CHEMISTRY OF MATERIALS
卷 22, 期 19, 页码 5537-5542

出版社

AMER CHEMICAL SOC
DOI: 10.1021/cm101546t

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资金

  1. NSF [DMR-0955471]
  2. Research Corporation Cottrell Scholar Award

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In our prior studies, we reported the growth of Co3O4 nanowire arrays via the ammoniaevaporation-induced growth in solution and their promising applications in a Li-ion battery and oxygen evolution. Although we had identified that the growth of Co3O4 nanowire went through the beta-Co(OH)(2) intermediate, the growth mechanism of Co(OH)(2) nanowire was still elusive. The problem seemed to be rooted in its layered brucite crystal structure, which was not previously known to grow one-dimensionally (1D) perpendicular.to the layers. In this paper, we present our recent discovery that axial screw dislocation is responsible for such longitudinal growth. Through bright-field transmission electron microscope (TEm) characterizations, the screw dislocation was directly observed as a dark-contrasted line along Co(OH)(2) nanowires. Emergent spiral growth steps provide active sites For immediate adsorption of incoming molecules, resulting in a fast spiral advance rate along the e-axis or the brucite crystal. This st udy shows a new example oft he screw-dislocation driven growth or ID nanostructu res.

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