4.8 Article

Thin-Film Morphology Control in Naphthalene-Diimide-Based Semiconductors: High Mobility n-Type Semiconductor for Organic Thin-Film Transistors

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CHEMISTRY OF MATERIALS
卷 20, 期 24, 页码 7486-7491

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AMER CHEMICAL SOC
DOI: 10.1021/cm802071w

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In organic thin film transistors (OTFT), the morphology and microstructure of an organic thin film has a strong impact on the charge carrier mobility and device characteristics. To have well-defined and predictable thin film morphology, it is necessary to adapt the basic structure of semiconducting molecules in a way that results in an optimum crystalline packing motif. Here we introduce a new molecular design feature for organic semiconductors that provides the optimized crystalline packing and thin film morphology that is essential for efficient charge-carrier transport. Thus, cyclohexyl end groups in naphthalene diimide assist in directing intermolecular stacking leading to a dramatic improvement in field effect mobility. Accordingly, OTFT devices prepared with vapor deposited N,N'-bis(cyclohexyl) naphthalene-1,4,5,8-bis(dicarboximide) (1) regularly exhibit field effect mobility near 6 cm(2)/(V s), which is one of the highest carrier mobilities reported for either n- or p-type organic semiconducting thin films.

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