Growth of Few-Layer Graphene on a Thin Cobalt Film on a Si/SiO2 Substrate

Few-layered sheets of graphene were synthesized on polycrystalline thin Co and Ni films by low pressure chemical vapor deposition. On average, thinner layers of graphene were synthesized on Co than on the conventional Ni at the same process conditions, but slightly higher defects were detected on Co-grown graphene layers than on Ni-grown ones. Possible explanations for this are suggested.