Role of zinc oxide nanomorphology on Schottky diode properties

Here, we present the solvothermal synthesis of surfactant guided rod and sphere like zinc-oxide (ZnO) nanoparticles and their application in ITO/ZnO/Al based Schottky diode. Morphology dependent device parameters like ideality factor, barrier potential and series resistance have been analyzed on the basis of charge transport phenomena. The effect of ZnO nanomorphology on device performance has been explained on the basis of multi generation-recombination via interface traps. Carrier mobility, carrier concentration and density of states near Fermi level were also evaluated to see the morphological effect on device property. Finally device performance has been correlated with ZnO morphology. (C) 2014 Elsevier B.V. All rights reserved.