4.6 Article

Resistive switching in single vertically-aligned ZnO nanowire grown directly on Cu substrate

期刊

CHEMICAL PHYSICS LETTERS
卷 575, 期 -, 页码 112-114

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ELSEVIER SCIENCE BV
DOI: 10.1016/j.cplett.2013.05.005

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  1. NASA [NNX09AQ44A]
  2. NASA [103935, NNX09AQ44A] Funding Source: Federal RePORTER

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We report unipolar resistive switching measurements from single vertical ZnO nanowires grown directly on a copper substrate. Electrical measurements using a conductive atomic force microscope show conductive filament formation at 30 kV/cm, which is an order of magnitude lower field than that for bulk films and suggest a preferential filament formation likely on the surface of the nanowires. A high resistive ratio of three orders of magnitude was observed between the high and low resistive memory states. (C) 2013 Elsevier B. V. All rights reserved.

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