期刊
CHEMICAL PHYSICS LETTERS
卷 575, 期 -, 页码 112-114出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.cplett.2013.05.005
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资金
- NASA [NNX09AQ44A]
- NASA [103935, NNX09AQ44A] Funding Source: Federal RePORTER
We report unipolar resistive switching measurements from single vertical ZnO nanowires grown directly on a copper substrate. Electrical measurements using a conductive atomic force microscope show conductive filament formation at 30 kV/cm, which is an order of magnitude lower field than that for bulk films and suggest a preferential filament formation likely on the surface of the nanowires. A high resistive ratio of three orders of magnitude was observed between the high and low resistive memory states. (C) 2013 Elsevier B. V. All rights reserved.
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