期刊
CHEMICAL PHYSICS LETTERS
卷 474, 期 1-3, 页码 141-145出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.cplett.2009.04.024
关键词
-
资金
- Hong Kong Special Administrative Region, China [7021/03P, 7010/05P]
- Strategic Research Theme
- University Development Fund
- Seed Funding
- Natural Sciences and Engineering Research Council of Canada (NSERC)
Near infrared (NIR) emission was studied in rubrene: fullerene planar and bulk heterojunction bifunctional devices. The degree of mixing was controlled by changing the substrate temperature for planar heterojunctions and changing the ratio of the two materials for bulk heterojunctions. We found that there was no simple correlation between the presence of the NIR emission and the photovoltaic efficiency and the turn-on voltage of the devices. The origin of the NIR emission and the relationship between EL spectra, photovoltaic efficiency, and the degree of mixing of the donor and acceptor materials is discussed. (C) 2009 Elsevier B. V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据