期刊
CHEMICAL COMMUNICATIONS
卷 48, 期 34, 页码 4052-4054出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c2cc17543f
关键词
-
资金
- Creative Research Initiatives, MEST/NRF
Here, we demonstrate a rapid and simple method for doping a reduced graphene oxide (rGO) field effect transistor (FET) with nanocrystals to produce dual n-type behavior with light and bias voltage. This convenient method promises industrial level doping of graphene transistors.
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