Effect of redox proteins on the behavior of non-volatile memory

We demonstrated the memory effect of redox proteins in organic field-effect transistor (OFET) flash memory devices. Redox proteins include a heme structure, which has reversible redox reactions. These properties of the proteins could be successfully applied to the flash memory devices, which show a considerable memory window (similar to 11 V) and relatively good endurance properties (similar to over 100 cycles).