期刊
JOURNAL OF APPLIED PHYSICS
卷 87, 期 1, 页码 387-391出版社
AMER INST PHYSICS
DOI: 10.1063/1.371872
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The spin-dependent tunneling phenomenon in symmetric and asymmetric resonant semiconductor heterostructures is employed in a theoretical study to investigate the output tunnel current polarization at zero magnetic field. A simple model of the resonant tunneling structures and a simple one-electron band approximation with spin-orbit interaction are used in this work. It is shown that asymmetry in the electron distribution at the electrode regions provides spin-polarized tunnel current. An approach to optimize this spin-dependent effect is explored theoretically. In asymmetric resonant tunneling structures, we estimate theoretically that the polarization can reach 40% with a moderate applied electric field. (C) 2000 American Institute of Physics. [S0021- 8979(00)09501-3].
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