Transient enhanced diffusion and deactivation of high-dose implanted arsenic in silicon

We have simulated the transient enhanced diffusion (TED) of high-concentration arsenic (As) in silicon during postimplantation annealing. A unified simulation was done, based on models for As diffusion, for TED by self-interstitial clusters, and for end-of-range (EOR) defects. We have taken into account As complex formation and As precipitation, which cause the As deactivation. We have satisfactorily fitted As depth profiles at high doses (1-5 x 10(15) cm(-2)) in a wide range of annealing conditions (750-1000 degrees C). The As complex formation plays an important role in determining the diffusion profiles through the self-interstitial emission upon the formation at lower temperatures and through As deactivation at higher temperatures. The simulation results suggest that boron (B) segregation toward the As tail regions is associated with self-interstitial distributions determined by EOR defects and As profiles.