期刊
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
卷 18, 期 5, 页码 2505-2508出版社
A V S AMER INST PHYSICS
DOI: 10.1116/1.1288134
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A selective reactive ion etch process for GaAs high electron mobility transistor gate recess has been developed using BCl3/SF6 gas mixtures. The influence of gas flow ratio, pressure, and radio-frequency (rf) power on the selectivity was examined. An optimum selective etching process using a Plasma Therm 790 reactive ion etching system was determined to be 50 W rf power, gas flow ratio of BCl3/SF6 = 2.5 sccm/7.5 sccm, and chamber pressure of 50 mTorr. Excellent etch uniformity was achieved by using an HCl/ethanol solution to remove native oxide prior to plasma etching. (C) 2000 American Vacuum Society. [S0734-211X(00)00205-5].
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