Cluster formation during annealing of ultra-low-energy boron-implanted silicon

The clustering of low-energy ion-implanted boron has been investigated. Two 1 keV boron implantations at doses of 1 x 10(15) and 5 x 10(15) cm(-2) were annealed for 10 s between 700 and 1100 degrees C. The evolution of the boron concentration profiles was monitored using secondary ion mass spectrometry. Electrical activation was measured with four-point-probe measurements and spreading resistance profiling. The displaced Si concentration profiles were determined from medium-energy ion-scattering measurements. (C) 2000 American Vacuum Society. [S0734-211X(00)01301-9].