期刊
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
卷 18, 期 1, 页码 540-544出版社
AMER INST PHYSICS
DOI: 10.1116/1.591228
关键词
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Scanning spreading resistance microscopy (SSRM) is used to determine the complete two-dimensional carrier profile of fully processed 0.29 mu m p- and n-type metal-oxidesemiconductor field-effect transistors with various source/drain implants. A comparison is made between the quantified profiles determined using SSRM and the profiles extracted from the electrical device characteristics using an inverse modeling technique. This comparison includes source/drain and well implants, epilayers, and field implants. The data are compared in terms of depth precision and carrier-concentration accuracy and show a good agreement. This article also addresses the limitations and possible artifacts of both methods. (C) 2000 American Vacuum Society. [S0734-211X(00)10501-3].
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