期刊
IEEE TRANSACTIONS ON MAGNETICS
卷 36, 期 1, 页码 381-385出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/20.822551
关键词
anisotropic magnetoresistance; permalloy film; seed layer
The use of a thin (Ni0.81Fe0.19)(1-x)Cr-x seed layer for obtaining high anisotropic magnetoresistance in Permalloy (Ni0.81Fe0.19) films is reported. The process yields a high Delta R/R of, for example, 3.2% for 120-Angstrom-thick NiFe, without high-temperature deposition or annealing, X-ray diffraction shows that the NiFeCr seed layer causes the formation of large (111) textured grains in the Permalloy film, and that the interface between these two layers is quite smooth, These both increase the Delta R and reduce the resistance R in the film, which lead to the high Delta R/R, Also discussed is the enhanced Delta R/R and thermal stability trilayer magnetoresistive sensors using this NiFeCr instead of Ta as a spacer.
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