期刊
ELECTROCHIMICA ACTA
卷 45, 期 28, 页码 4591-4598出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/S0013-4686(00)00610-1
关键词
flat H-Si(111) surface; etching; mechanism; AFM
The reasons why ideally flat H-Si(111) surface call be prepared by NH4F etching are investigated from correlation between AFM observations and experimental conditions used for etching. It is shown that pitting may be completely suppressed if a one side polished wafer is immersed in an oxygen free solution. An analytical electrochemical study of the (111) and rough face of the same n-Si wafer is presented to yield insight into observations. (C) 2000 Elsevier Science Ltd. All rights reserved.
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