期刊
SOLID STATE COMMUNICATIONS
卷 116, 期 9, 页码 495-499出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/S0038-1098(00)00361-6
关键词
disordered systems; electronic transport; quantum Hall effect
We have studied Shubnikov-de Haas oscillations in a two-dimensional electron system in silicon at low electron densities. Near the metal-insulator transition, only 'spin' minima of the resistance at Landau-level filling factors v = 2, 6, 10, and 14 are seen, while the 'cyclotron' minima at v = 4, 8, and 12 disappear. A simple explanation of the observed behavior requires a giant enhancement of the spin splitting near the metal-insulator transition. (C) 2000 Elsevier Science Ltd. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据