期刊
DIAMOND AND RELATED MATERIALS
卷 9, 期 9-10, 页码 1767-1773出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/S0925-9635(00)00299-5
关键词
cubic boron nitride; growth; modeling; ion bombardment; stress; doping
This article reviews the growth techniques and growth parameters for the formation of cubic boron nitride (c-BN) thin films. It is generally accepted that the impact of energetic ions or neutral atoms is crucial to achieve c-BN film growth. Furthermore, c-BN nucleation is only observed within certain thresholds for the deposition parameters, including the substrate temperature. However, the temperature threshold exists only for the nucleation and not for the growth of c-BN. We will show that three independent characterization methods are necessary for the non-ambiguous identification of the c-BN phase within BN films. The cylindrical thermal spike model developed to describe the formation of diamond-like phases by ion deposition can be used to explain the c-BN nucleation and growth. A short introduction and the basic ideas of this model will be given. Finally, possible tribological applications of c-BN films and the doping of c-BN films will be discussed. (C) 2000 Elsevier Science S.A. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据