Preparation of FeN thin films by chemical vapor deposition using a chloride source

Iron nitride (FeN) films were grown on grass substrates by chemical Vapor deposition (CVD) using FeCl3 and NH3 as the source materials. X-ray diffractograms showed a pattern typical of epsilon-Fe3N with a hexagonal structure, The growth rate of the films increased with increasing growth temperature, with a maximum growth rate of about 1.39 nm/s at 923.15 K. The saturation magnetization and coercive forces of the epsilon-Fe3N deposited at 923.15 K were 83.6 A(.)m(2.)kg(-1) and 9.01 mT, respectively. (C) 2000 Elsevier Science B.V. All rights reserved.