期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 47, 期 1, 页码 147-153出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/16.817580
关键词
MOSFET's; nanotechnology; quantum dots; quantum effect semiconductor devices; silicon; SIMOX; tunneling
A new fabrication method for Si single-electron transistors (SET's) is proposed, The method applies thermal oxidation to a Si wire with a fine trench across it on a silicon-on-insulator substrate. During the oxidation, the Si wire with the fine trench is converted, in a self-organized manner, into a twin SET structure with two single-electron islands, one along each edge of the trench, due to position-dependent oxidation-rate modulation caused by stress:accumulation. Test devices demonstrated, at 40K, that the twin SET structure can operate as two individual SET's. Since the present method produces two SET's at the same time in a tiny area, It is suitable for integrating logic circuits based on pass-transistor-type logic and CMOS-type logic, which promises to lead to the fabrication of single-electron logic LSI's.
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