期刊
JOURNAL OF APPLIED PHYSICS
卷 89, 期 1, 页码 348-363出版社
AMER INST PHYSICS
DOI: 10.1063/1.1330764
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We investigate theoretically coherent electron tunneling through three-dimensional microscopic Si[100]/SiO2/Si[100] model junctions with oxide thicknesses between 0.4 and 4.6 nm. The transmission probabilities of these structures were calculated using a semiempirical tight-binding scattering method. Our calculations provide a basis for the microscopic understanding of the observed independence of tunneling transmission on the orientation of the bulk silicon and on the nature of inelastic defect-assisted tunneling. We document significant differences between transmission coefficients obtained with the present scheme and with the popular effective-mass-based approaches. The energy dependence of the effective tunneling mass in bulk silicon dioxide is predicted. (C) 2001 American Institute of Physics.
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