期刊
JOURNAL OF MATERIALS CHEMISTRY
卷 11, 期 2, 页码 464-468出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/b005888m
关键词
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AACVD (aerosol-assisted chemical vapour deposition) using (PhS)(4)Sn as precursor leads to the deposition of Sn3O4 in the absence of H2S and tin sulfides when H2S is used as co-reactant. At 450 degreesC the film deposited consists of mainly SnS2 while at 500 degreesC SnS is the dominant component. The mechanism of decomposition of (PhS)(4)Sn is discussed and the structure of the precursor presented.
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